sangdest microelectronics technical data green products data sheet n1445, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn 503cnq series 503cnq080/503CNQ100 schottky rectifier applications: high current switching power supply plating power supply free-wheeling diodes reverse battery protection converters ups system welding features: 175 t j operation center tap module high purity, high temperature epoxy encapsulation f or enhanced mechanical strength and moisture resistance low forward voltage drop high frequency operation guard ring for enhanced ruggedness and long term re liability this is a pb ? free device all smc parts are traceable to the wafer lot additional testing can be offered upon request mechanical dimensions: in mm/ inches prm4 (non-isolated) marking,molding resin marking for 503cnq080/100, 1 st row ss yywwl, 2 nd row 503cnq080/100 where yy is the manufacture year ww is the manuf acture week code l is the wafer s lot number molding resin epoxy resin ul:94v-0
sangdest microelectronics technical data green products data sheet n1445, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn 503cnq series maximum ratings: characteristics symbol condition max. units 80 503cnq080 peak inverse voltage v rwm - 100 503CNQ100 v 250 per leg max. average forward current i f(av) 50% duty cycle @t c =122c, rectangular wave form 500 per device a max. peak one cycle non- repetitive surge current (per leg) i fsm 8.3 ms, half sine pulse 5000 a electrical characteristics: characteristics symbol condition max. units v f1 @ 250a, pulse, t j = 25 c 0.90 v max. forward voltage drop (per leg) * v f2 @ 250a, pulse, t j = 175 c 0.72 v i r1 @v r = rated v r t j = 25 c 8 ma max. reverse current (per leg) * i r2 @v r = rated v r t j = 125 c 200 ma max. junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz 7200 pf typical series inductance (per leg) l s measured lead to lead 5 mm from package body 5.0 nh max. voltage rate of change dv/dt - 10,000 v/ m s * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +175 c max. storage temperature t stg - -55 to +175 c maximum thermal resistance junction to case (per leg) r q jc dc operation 0.24 c/w maximum thermal resistance junction to case (per package) r q jc dc operation 0.12 c/w typical thermal resistance, case to heat sink r q cs mounting surface, smooth and greased 0.08 c/w mounting torque 24(min) 35(max) mounting torque t m - terminal torque 35(min) 46(max) kg-cm approximate weight wt - 78 g case style prm4 non-isolated
sangdest microelectronics technical data green products data sheet n1445, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn 503cnq series
sangdest microelectronics technical data green products data sheet n1445, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn 503cnq series disclaimer: 1- the information given herein, including the spec ifications and dimensions, is subject to change wit hout prior notice to improve product characteristics. before ordering, purchaser s are advised to contact the smc - sangdest microel ectronics (nanjing) co., ltd sales department for the latest version of the data sheet(s). 2- in cases where extremely high reliability is req uired (such as use in nuclear power control, aerosp ace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices th at feature assured safety or by means of users fail-safe precautions or other a rrangement . 3- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any damages that may result from an accident or any other cause during operation of the users unit s according to the datasheet(s). smc - sangdest mic roelectronics (nanjing) co., ltd assumes no responsibility for any intellectual prop erty claims or any other problems that may result f rom applications of information, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exce eding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or s mc - sangdest microelectronics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplic ated, in any form, in whole or part, without the ex pressed written permission of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the dat asheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safet y nor are they to be applied to that purpose by the ir direct purchasers or any third party. when exporting these products (technologies) , the necessary procedures are to be taken in accor dance with related laws and regulations..
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